leshan radio company, ltd. 1 3 2 LBSS138LT1 sot? 23 (to?236ab) 200 mamps 50 volts r ds(on) = 3.5 1 2 3 n - channel devicepackageshipping ordering information LBSS138LT1 sot233000 tape & reel w j1 j1 = device code w = work week marking diagram & pin assignment 3 2 1 drain gate source power mosfet 200 mamps, 50 volts nchannel sot23 typical applications are dc?dc converters, power management in portable and battery?powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ? low threshold voltage (v gs(th): 0.5v...1.5v) makes it ideal for low voltage applications ? miniature sot?23 surface mount package saves board space symbol value unit draintosource voltage v dss 50 vdc gatetosource voltage continuous v gs 20 vdc drain current continuous @ t a = 2 5c pulsed drain current (t p 10 m s) i d i dm 200 800 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j, t stg 55 to 150 c thermal resistance junctiontoambient r qja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c rating maximum ratings (t a = 25 o c unless otherwise noted) LBSS138LT1 - 1/5 ? pb?free package may be available. the g?suffix denotes a pb?free lead finish LBSS138LT1g sot233000 tape & reel
leshan radio company, ltd. LBSS138LT1 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 250 madc) v (br)dss 50 vdc zero gate voltage drain current (v ds = 25 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc) i dss 0.1 0.5 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 0.1 m adc on characteristics (note 1.) gatesource threshold voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.5 1.5 vdc static draintosource onresistance (v gs = 2.75 vdc, i d < 200 madc, t a = 40c to +85 c) (v gs = 5.0 vdc, i d = 200 madc) r ds(on) 5.6 10 3.5 ohms forward transconductance (v ds = 25 vdc, i d = 200 madc, f = 1.0 khz) g fs 100 mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c iss 40 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c oss 12 25 transfer capacitance (v dg = 25 vdc, v gs = 0, f = 1 mhz) c rss 3.5 5.0 switching characteristics (note 2.) turnon delay time (v t d(on) 20 ns turnoff delay time (v dd = 30 vdc, i d = 0.2 adc,) t d(off) 20 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. LBSS138LT1 - 2/5
leshan radio company, ltd. LBSS138LT1 - 3/5 LBSS138LT1 typical electrical characteristics r ds(on) , drain-to-source resistance (normalized) figure 1. onregion characteristics 1 t j , junction temperature ( c) figure 2. transfer characteristics figure 3. onresistance variation with temperature v gs = 10 v i d = 0.8 a -55 -5 45 95 145 0.6 0.8 v gs , gate-to-source voltage (volts) 0 4 0 q t , total gate charge (pc) 8 500 v ds = 40 v t j = 25 c 1000 i d = 200 ma 1500 1.2 2 1.4 1.6 1.8 v gs = 4.5 v i d = 0.5 a 2000 10 2 6 v gs(th) , variance (volts) 1 t j , junction temperature ( c) i d = 1.0 ma -55 -5 45 95 145 0.75 0.875 1.125 1.25 0 0.3 0.4 0.1 0.6 0.2 figure 4. threshold voltage variation with temperature 1 1.5 2 2.5 3 i d , drain current (amps) v gs , gate-to-source voltage (volts) figure 5. gate charge v ds = 10 v 150 c 25 c -55 c 3.5 0.5 4 024 10 0 0.3 0.4 v ds , drain-to-source voltage (volts) i d , drain current (amps) 6 0.1 8 0.6 0.2 0.5 13 9 57 v gs = 3.25 v v gs = 2.75 v v gs = 2.5 v v gs = 3.0 v v gs = 3.5 v 0.7 0.8 t j = 25 c 0.7 0.8 0.9 4.5 0.50 2.2 -30 20 70 120 2500 3000
leshan radio company, ltd. LBSS138LT1 typical electrical characteristics r ds(on) , drain-to-source resistance (ohms) figure 6. onresistance versus drain current 0 0.1 0.2 2 5 6 figure 7. onresistance versus drain current i d , drain current (amps) figure 8. onresistance versus drain current 0.001 0.1 1 figure 9. onresistance versus drain current v sd , diode forward voltage (volts) figure 10. body diode forward voltage i d , diode current (amps) 25 c v gs = 2.5 v t j = 150 c 4 0 0.2 0.4 0.6 3 0.01 -55 c 25 c 0.8 r ds(on) , drain-to-source resistance (ohms) 0 0.1 0.2 1 7 i d , drain current (amps) v gs = 2.75 v 5 3 0 120 40 0 80 510 c iss 15 0.05 0.15 0.25 150 c -55 c 6 8 4 2 0.05 0.15 0.25 20 1.0 1.2 150 c 25 c -55 c 8 9 7 100 20 60 figure 11. capacitance r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 2.5 3 i d , drain current (amps) 25 c v gs = 4.5 v 2 1.5 r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 4 i d , drain current (amps) v gs = 10 v 3 2 0.1 0.3 0.5 150 c -55 c 3.5 4.5 2.5 1.5 0.1 0.3 0.5 150 c 25 c -55 c 4 4.5 3.5 10 1 0.25 0.45 0.15 0.35 5 5.5 6 0.25 0.45 0.15 0.35 25 c oss c rss LBSS138LT1 - 4/5
leshan radio company, ltd. d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches m illi m et ers dim m in m a x m in m a x a 0. 1102 0. 1197 2. 80 3.04 b 0. 0472 0. 0551 1. 20 1.40 c 0. 0350 0. 0440 0. 89 1.11 d 0. 0150 0. 0200 0. 37 0.50 g 0. 0701 0. 0807 1. 78 2.04 h 0. 0005 0. 0040 0. 013 0 . 100 j 0. 0034 0. 0070 0. 085 0 . 177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0. 0177 0. 0236 0. 45 0.60 pin 1. base 2. emitter 3. co llect or 0.031 0.8 sot-23 3 leshan radio company, ltd. LBSS138LT1 LBSS138LT1 - 5/5
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